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DMP2160UW
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current
T A = +25°C
T A = +70°C
I D
I DM
-1.5
-1.2
-10
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
350
360
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
-20
—
—
V
V GS = 0V, I D = -250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = +25°C
I DSS
I GSS
—
—
—
—
—
—
-1.0
±100
±800
μA
nA
V DS = -20V, V GS = 0V
V GS = ±8V, V DS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.4
-0.6
-0.9
V
V DS = V GS , I D = -250μA
75
100
V GS = -4.5V, I D = -1.5A
Static Drain-Source On-Resistance
R DS(ON)
—
90
120
m ?
V GS = -2.5V, I D = -1.2A
120
160
V GS = -1.8V, I D = -1A
Forward Transconductance
Diode Forward Voltage (Note 6)
g FS
V SD
—
—
4
—
—
-1.0
S
V
V DS = -10V, I D = -1.5A
V GS = 0V, I S = -1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
—
—
—
627
64
53
—
—
—
pF
pF
pF
V DS = -10V, V GS = 0V
f = 1.0MHz
5. Device mounted on 1in FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
Notes:
2
6. Short duration pulse test used to minimize self-heating effect.
DMP2160UW
Document number: DS31521 Rev. 5 - 2
2 of 5
www.diodes.com
February 2013
? Diodes Incorporated
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